BCX6825H6327XTSA1
Infineon Technologies
Infineon Technologies
TRANS NPN 20V 1A SOT89
$0.31
Available to order
Reference Price (USD)
5,000+
$0.16199
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unmatched performance with the BCX6825H6327XTSA1 Bipolar Junction Transistor (BJT) by Infineon Technologies. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the BCX6825H6327XTSA1 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Infineon Technologies for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
- Power - Max: 3 W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PG-SOT89
Related Products
onsemi
2N3055AG
onsemi
BD787G
onsemi
NSS12200WT1G
Nexperia USA Inc.
PBSS304NXZ
onsemi
2SC4107M-TON-ON
NTE Electronics, Inc
NTE328
Diodes Incorporated
BCX38CSTZ
Renesas Electronics America Inc
2SC945A(0)-T-A
Rohm Semiconductor
2SC4617EBTLP
Microchip Technology