BD13916STU
onsemi
onsemi
TRANS NPN 80V 1.5A TO126-3
$0.67
Available to order
Reference Price (USD)
1+
$0.52000
10+
$0.44800
100+
$0.33720
500+
$0.26712
1,000+
$0.20869
Exquisite packaging
Discount
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Enhance your circuit designs with the BD13916STU Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The BD13916STU is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust onsemi to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Power - Max: 1.25 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126-3
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