BD16950EFV-CE2
Rohm Semiconductor
Rohm Semiconductor
IC GATE DRVR HALF-BRIDG 24HTSSOP
$6.46
Available to order
Reference Price (USD)
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$6.46000
500+
$6.3954
1000+
$6.3308
1500+
$6.2662
2000+
$6.2016
2500+
$6.137
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Rohm Semiconductor presents the BD16950EFV-CE2 as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Active
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 3V ~ 5.5V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
- Supplier Device Package: 24-HTSSOP-B
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