BD6562FV-LBE2
Rohm Semiconductor
Rohm Semiconductor
IC GATE DRVR LOW-SIDE 16SSOP
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BD6562FV-LBE2 from Rohm Semiconductor is a high-performance PMIC - Gate Driver IC designed for precision control in power management applications. This integrated circuit excels in driving MOSFETs and IGBTs with exceptional speed and reliability, making it ideal for high-frequency switching systems. Key features include robust noise immunity, low propagation delay, and adaptive dead-time control to optimize efficiency. These gate drivers are widely used in industrial motor controls, solar inverters, and electric vehicle powertrains. For instance, the BD6562FV-LBE2 ensures seamless operation in servo drives requiring nanosecond-level response times. Its compact design and thermal protection mechanisms further enhance system longevity in demanding environments like factory automation and renewable energy systems.
Specifications
- Product Status: Obsolete
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 10V ~ 25V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 600mA, 600mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: -25°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-LSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-SSOP-B
Related Products
Infineon Technologies
IR25602SPBF-INF
Renesas Electronics America Inc
HIP6603BCBZ-T
Semtech Corporation
SC1214TSTRT
Microchip Technology
MIC4479YME-T5
Renesas Electronics America Inc
ISL78420ARTBZ-T
Microchip Technology
TC4427AVOA713-VAO
Texas Instruments
LMD18400N
Renesas Electronics America Inc
PX3511BDDG
Renesas Electronics America Inc
ISL6612ACBZA-T
Infineon Technologies