BD682G
onsemi
onsemi
TRANS PNP DARL 100V 4A TO126
$0.41
Available to order
Reference Price (USD)
1+
$0.74000
10+
$0.64700
100+
$0.50040
500+
$0.39902
1,000+
$0.32250
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BD682G Bipolar Junction Transistor (BJT) from onsemi is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the BD682G is a reliable component for demanding applications. onsemi's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
- Power - Max: 40 W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
Related Products
Panjit International Inc.
BC807-25W-AU_R1_000A1
NTE Electronics, Inc
MPSA28
Nexperia USA Inc.
BC807-25QBH-QZ
Nexperia USA Inc.
BCP52-10,135
Rohm Semiconductor
2SCR553PFRAT100
Microchip Technology
2N3501UB
Central Semiconductor Corp
CMUT2907A BK PBFREE
onsemi
2SA1179N6-TB-E
Rohm Semiconductor
2SD1782KT146Q
Motorola