BDP947H6327XTSA1
Infineon Technologies
Infineon Technologies
TRANS NPN 45V 3A SOT223-4
$0.53
Available to order
Reference Price (USD)
1+
$0.52920
500+
$0.523908
1000+
$0.518616
1500+
$0.513324
2000+
$0.508032
2500+
$0.50274
Exquisite packaging
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Discover the BDP947H6327XTSA1 Bipolar Junction Transistor (BJT) from Infineon Technologies, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the BDP947H6327XTSA1 is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose Infineon Technologies for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
- Power - Max: 5 W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4-24
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