BDP949H6327XTSA1
Infineon Technologies
Infineon Technologies
TRANS NPN 60V 3A SOT223-4
$0.53
Available to order
Reference Price (USD)
1+
$0.52920
500+
$0.523908
1000+
$0.518616
1500+
$0.513324
2000+
$0.508032
2500+
$0.50274
Exquisite packaging
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The BDP949H6327XTSA1 by Infineon Technologies is a premium Bipolar Junction Transistor (BJT) designed for superior performance in various electronic applications. This single BJT transistor features high current handling and fast switching speeds, making it ideal for power management and control systems. Commonly used in automotive electronics, LED drivers, and power supplies, the BDP949H6327XTSA1 ensures efficient and stable operation. Backed by Infineon Technologies's reputation for quality, this transistor is a trusted choice for engineers and designers seeking reliable discrete semiconductor solutions.
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
- Power - Max: 5 W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4-10
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