BDX53C
STMicroelectronics
STMicroelectronics
TRANS NPN DARL 100V 8A TO220
$1.30
Available to order
Reference Price (USD)
2,000+
$0.45276
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with the BDX53C Bipolar Junction Transistor (BJT) from STMicroelectronics. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the BDX53C delivers superior performance in diverse environments. STMicroelectronics's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
- Power - Max: 60 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
Related Products
onsemi
MJD112-1G
onsemi
MMBT6521LT1G
Nexperia USA Inc.
BCX55-10TF
Nexperia USA Inc.
BC817K-16HVL
onsemi
SBC846BLT3G
Microchip Technology
2N2102S
Diodes Incorporated
ZTX953STZ
onsemi
NSV12100UW3TCG
onsemi
2SC5566-TD-E
onsemi