BF1109WR,115
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 11V 30MA CMPAK-4
$0.18
Available to order
Reference Price (USD)
1+
$0.18000
500+
$0.1782
1000+
$0.1764
1500+
$0.1746
2000+
$0.1728
2500+
$0.171
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BF1109WR,115 from NXP USA Inc. is a high-performance RF MOSFET transistor designed for demanding applications in the Discrete Semiconductor Products category. As part of the Transistors - FETs, MOSFETs - RF subcategory, this component offers exceptional gain, low noise, and high-frequency operation, making it ideal for RF amplification and switching circuits. Key features include low on-resistance, fast switching speeds, and excellent thermal stability. These transistors are widely used in wireless communication systems, radar equipment, and RF power amplifiers. For instance, the BF1109WR,115 is commonly employed in 5G base stations, military communication devices, and industrial RF heating systems where reliability and efficiency are paramount. Trust NXP USA Inc.'s expertise in semiconductor technology to deliver superior performance for your RF applications.
Specifications
- Product Status: Obsolete
- Transistor Type: N-Channel Dual Gate
- Frequency: 800MHz
- Gain: 20dB
- Voltage - Test: 9 V
- Current Rating (Amps): 30mA
- Noise Figure: 1.5dB
- Current - Test: -
- Power - Output: -
- Voltage - Rated: 11 V
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: CMPAK-4
Related Products
Ampleon USA Inc.
ART1K6FHU
Wolfspeed, Inc.
CGHV37400F
CEL
CE3514M4
Skyworks Solutions Inc.
SKY65050-372LF
Ampleon USA Inc.
BLF989U
onsemi
SCH1305-TL-E
Microwave Technology Inc.
MWT-5F
MACOM Technology Solutions
MRF166W
WAVEPIA.,Co.Ltd
WP2806008UH
Wolfspeed, Inc.