BFG410W,135
NXP USA Inc.
NXP USA Inc.
RF TRANS NPN 4.5V 22GHZ CMPAK-4
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The BFG410W,135 RF Bipolar Junction Transistor (BJT) by NXP USA Inc. is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the BFG410W,135 is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose NXP USA Inc. for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 4.5V
- Frequency - Transition: 22GHz
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 2GHz
- Gain: 21dB
- Power - Max: 54mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 2V
- Current - Collector (Ic) (Max): 12mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: CMPAK-4
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