BFG520/XR,215
NXP USA Inc.
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143R
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The BFG520/XR,215 RF Bipolar Junction Transistor (BJT) by NXP USA Inc. is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the BFG520/XR,215 is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose NXP USA Inc. for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 9GHz
- Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
- Gain: -
- Power - Max: 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
- Current - Collector (Ic) (Max): 70mA
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-143R
- Supplier Device Package: SOT-143R
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