BFG520W/X,115
NXP USA Inc.
NXP USA Inc.
RF TRANS NPN 15V 9GHZ 4SO
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Discover the BFG520W/X,115, a cutting-edge RF Bipolar Junction Transistor (BJT) from NXP USA Inc., part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The BFG520W/X,115 features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose NXP USA Inc. for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 9GHz
- Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
- Gain: -
- Power - Max: 500mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
- Current - Collector (Ic) (Max): 70mA
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-343 Reverse Pinning
- Supplier Device Package: 4-SO
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