BFM505,115
NXP USA Inc.
NXP USA Inc.
RF TRANS 2 NPN 8V 9GHZ 6TSSOP
$0.38
Available to order
Reference Price (USD)
1+
$0.38000
500+
$0.3762
1000+
$0.3724
1500+
$0.3686
2000+
$0.3648
2500+
$0.361
Exquisite packaging
Discount
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Enhance your RF designs with the BFM505,115, a high-efficiency Bipolar Junction Transistor (BJT) from NXP USA Inc.. As part of the Discrete Semiconductor Products family, this transistor is tailored for RF applications, providing superior amplification and signal integrity. Its high-frequency performance and low distortion make it suitable for use in TV tuners, wireless microphones, and RF identification systems. The BFM505,115 features high current gain, excellent thermal characteristics, and long-term reliability. Whether for commercial or industrial use, this transistor delivers consistent results. Trust NXP USA Inc. for high-quality RF BJTs that meet the toughest demands.
Specifications
- Product Status: Obsolete
- Transistor Type: 2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max): 8V
- Frequency - Transition: 9GHz
- Noise Figure (dB Typ @ f): 1.1dB ~ 1.9dB @ 900MHz ~ 2GHz
- Gain: -
- Power - Max: 500mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
- Current - Collector (Ic) (Max): 18mA
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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