BFP183WH6327
Infineon Technologies
Infineon Technologies
RF TRANSISTOR, L BAND, NPN
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing the BFP183WH6327, a high-performance RF Bipolar Junction Transistor (BJT) from Infineon Technologies, designed for the Discrete Semiconductor Products market. This transistor excels in RF amplification, offering high linearity and low phase noise. Its versatile design makes it suitable for a wide range of applications, including cellular base stations, satellite communication, and RF test equipment. The BFP183WH6327 features high power gain, excellent thermal performance, and long-term durability. Whether you're working on consumer electronics or industrial systems, this transistor delivers unmatched performance. Rely on Infineon Technologies for top-tier RF BJT solutions.
Specifications
- Product Status: Active
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Broadcom Limited
AT-32063-TR1G
NXP USA Inc.
BFG520,215
Infineon Technologies
BFP740E6327HTSA1
Broadcom Limited
AT-41533-TR1
onsemi
MPSH10G
Analog Devices Inc./Maxim Integrated
MAX2602ESA
Infineon Technologies
BFS 17P E6433
Broadcom Limited
AT-31033-BLKG
CEL
NE68819-T1
Infineon Technologies