BFP720FE6327
Infineon Technologies
Infineon Technologies
RF TRANSISTOR, X BAND, NPN
$0.36
Available to order
Reference Price (USD)
1+
$0.36000
500+
$0.3564
1000+
$0.3528
1500+
$0.3492
2000+
$0.3456
2500+
$0.342
Exquisite packaging
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The BFP720FE6327 RF Bipolar Junction Transistor (BJT) by Infineon Technologies is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the BFP720FE6327 is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose Infineon Technologies for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 4.7V
- Frequency - Transition: 45GHz
- Noise Figure (dB Typ @ f): 0.4dB ~ 1dB @ 150MHz ~ 10GHz
- Gain: 10.5dB ~ 28dB
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V
- Current - Collector (Ic) (Max): 25mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 4-TSFP
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Infineon Technologies