BFS17NQTA
Diodes Incorporated
Diodes Incorporated
RF TRANS NPN 11V 3.2GHZ SOT23
$0.22
Available to order
Reference Price (USD)
3,000+
$0.24750
Exquisite packaging
Discount
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Enhance your RF designs with the BFS17NQTA, a high-efficiency Bipolar Junction Transistor (BJT) from Diodes Incorporated. As part of the Discrete Semiconductor Products family, this transistor is tailored for RF applications, providing superior amplification and signal integrity. Its high-frequency performance and low distortion make it suitable for use in TV tuners, wireless microphones, and RF identification systems. The BFS17NQTA features high current gain, excellent thermal characteristics, and long-term reliability. Whether for commercial or industrial use, this transistor delivers consistent results. Trust Diodes Incorporated for high-quality RF BJTs that meet the toughest demands.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 11V
- Frequency - Transition: 3.2GHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 310mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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