BFU550235
NXP USA Inc.
NXP USA Inc.
NPN WIDEBAND SILICON RF TRANSIST
$0.15
Available to order
Reference Price (USD)
1+
$0.15000
500+
$0.1485
1000+
$0.147
1500+
$0.1455
2000+
$0.144
2500+
$0.1425
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with the BFU550235 Bipolar Junction Transistor (BJT) from NXP USA Inc.. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the BFU550235 delivers superior performance in diverse environments. NXP USA Inc.'s commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Nexperia USA Inc.
PBSS301NZ,135
NXP USA Inc.
BLF10M6LS200U112
Nexperia USA Inc.
BSR41F
Nexperia USA Inc.
PMBT2907AMYL
Rohm Semiconductor
2SC5658T2LR
Rohm Semiconductor
UMT4401U3HZGT106
Fairchild Semiconductor
MPSA14D26Z
onsemi
MPSA06RLG
Nexperia USA Inc.
BC817-25W,115
NXP Semiconductors