BFU768F,115
NXP Semiconductors
NXP Semiconductors
BFU768F - NPN WIDEBAND SILICON G
$0.13
Available to order
Reference Price (USD)
3,000+
$0.15266
6,000+
$0.14281
15,000+
$0.13296
30,000+
$0.13132
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the BFU768F,115, a cutting-edge RF Bipolar Junction Transistor (BJT) from NXP Semiconductors, part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The BFU768F,115 features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose NXP Semiconductors for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 2.8V
- Frequency - Transition: 110GHz
- Noise Figure (dB Typ @ f): 1.1dB ~ 1.2dB @ 5GHz ~ 5.9GHz
- Gain: 13.1dB
- Power - Max: 220mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 155 @ 10mA, 2V
- Current - Collector (Ic) (Max): 70mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-343F
- Supplier Device Package: 4-DFP
Related Products
NXP USA Inc.
BLF6G20-180PN112
Fairchild Semiconductor
KSC1393YTA
NXP USA Inc.
BLF6G22LS-180RN112
NXP USA Inc.
BLT81
Infineon Technologies
BFP 181 E7764
NXP USA Inc.
BLF6G20LS-180RN112
Renesas Electronics America Inc
NESG2031M05-T1-A
Microchip Technology
2N3495
Infineon Technologies
BFP405FH6327
Microchip Technology