BLA1011S-200,112
NXP USA Inc.

NXP USA Inc.
RF TRANSISTOR
$353.14
Available to order
Reference Price (USD)
1+
$353.14000
500+
$349.6086
1000+
$346.0772
1500+
$342.5458
2000+
$339.0144
2500+
$335.483
Exquisite packaging
Discount
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The BLA1011S-200,112 is a high-efficiency RF MOSFET transistor by NXP USA Inc., part of the Discrete Semiconductor Products range and categorized under Transistors - FETs, MOSFETs - RF. Designed for optimal RF performance, this transistor features low intermodulation distortion, high power density, and excellent thermal conductivity. It's widely used in professional audio equipment, military jamming systems, and wireless networking devices. The BLA1011S-200,112's ability to maintain stable operation at high frequencies makes it indispensable for modern RF applications. With NXP USA Inc.'s reputation for quality, you can trust the BLA1011S-200,112 to deliver consistent, high-performance results in your most demanding RF circuits.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.03GHz ~ 1.09GHz
- Gain: 13dB
- Voltage - Test: 36 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 150 mA
- Power - Output: 200W
- Voltage - Rated: 75 V
- Package / Case: SOT-502B
- Supplier Device Package: SOT502B