BLA1011S-200R,112
NXP USA Inc.

NXP USA Inc.
RF TRANSISTOR
$353.14
Available to order
Reference Price (USD)
1+
$353.14000
500+
$349.6086
1000+
$346.0772
1500+
$342.5458
2000+
$339.0144
2500+
$335.483
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the BLA1011S-200R,112, a cutting-edge RF MOSFET transistor from NXP USA Inc., engineered for the Discrete Semiconductor Products market. This product falls under the Transistors - FETs, MOSFETs - RF classification and boasts superior high-frequency characteristics, including minimal signal loss and outstanding power handling capabilities. Its advanced design ensures optimal performance in critical RF applications. The BLA1011S-200R,112 is particularly suited for use in satellite communication systems, broadcast transmitters, and medical imaging equipment. With features like enhanced linearity and robust ESD protection, this MOSFET is a top choice for engineers designing next-generation RF circuits. NXP USA Inc.'s commitment to quality ensures that the BLA1011S-200R,112 meets the highest industry standards for performance and durability.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.03GHz ~ 1.09GHz
- Gain: 13dB
- Voltage - Test: 36 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 150 mA
- Power - Output: 200W
- Voltage - Rated: 75 V
- Package / Case: SOT-502B
- Supplier Device Package: SOT502B