BLA6G1011LS-200RG11
NXP USA Inc.
NXP USA Inc.
POWER LDMOS TRANSISTOR, SOT502 (
$355.49
Available to order
Reference Price (USD)
1+
$355.49000
500+
$351.9351
1000+
$348.3802
1500+
$344.8253
2000+
$341.2704
2500+
$337.7155
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with the BLA6G1011LS-200RG11 Bipolar Junction Transistor (BJT) by NXP USA Inc.. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the BLA6G1011LS-200RG11 is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust NXP USA Inc. for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Microchip Technology
JANTXV2N3636L
onsemi
NST3904F3T5G
onsemi
SMBT1588LT3
Microchip Technology
JAN2N2906AUA/TR
Fairchild Semiconductor
2N5830
Diodes Incorporated
ZTX603STZ
NTE Electronics, Inc
NTE16004
Comchip Technology
BC857A-HF
Diodes Incorporated
ZXT10P12DE6TA
Microchip Technology