BLA6H1011-600
NXP USA Inc.
NXP USA Inc.
RF PFET, 2-ELEMENT, L BAND, SILI
$624.04
Available to order
Reference Price (USD)
1+
$624.04000
500+
$617.7996
1000+
$611.5592
1500+
$605.3188
2000+
$599.0784
2500+
$592.838
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the BLA6H1011-600, a premium Transistors - FETs, MOSFETs - Arrays product from NXP USA Inc.. This Discrete Semiconductor Products component is designed for optimal power handling and efficiency, featuring advanced technology to reduce switching losses. Suitable for applications such as DC-DC converters, audio amplifiers, and robotics, the BLA6H1011-600 delivers consistent and reliable operation. NXP USA Inc.'s dedication to excellence ensures this MOSFET array meets the highest industry standards.
Specifications
- Product Status: Active
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Renesas
UPA2790GR-E1-AT
IXYS
MCB20P1200LB-TRR
Analog Devices Inc./Maxim Integrated
MAX8791AGTA+
Harris Corporation
HIP2060ASE
Analog Devices Inc./Maxim Integrated
MAX8783GTC+
Renesas
UPA1601GS-E1-A
Fairchild Semiconductor
FDC655N
Renesas Electronics America Inc
NP16N06QLK-E1-AY
Micro Commercial Co
SIX3134KA-TP
Diodes Incorporated