BLC8G27LS-140AV518
NXP USA Inc.
NXP USA Inc.
LDMOS RF POWER TRANSISTOR
$994.80
Available to order
Reference Price (USD)
1+
$994.80000
500+
$984.852
1000+
$974.904
1500+
$964.956
2000+
$955.008
2500+
$945.06
Exquisite packaging
Discount
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Optimize your electronic systems with the BLC8G27LS-140AV518 Bipolar Junction Transistor (BJT) from NXP USA Inc.. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the BLC8G27LS-140AV518 delivers superior performance in diverse environments. NXP USA Inc.'s commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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