BLD6G21L-50,112
NXP USA Inc.
NXP USA Inc.
RF TRANSISTOR
$85.05
Available to order
Reference Price (USD)
1+
$85.05000
500+
$84.1995
1000+
$83.349
1500+
$82.4985
2000+
$81.648
2500+
$80.7975
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BLD6G21L-50,112 by NXP USA Inc. is a premium RF MOSFET transistor belonging to the Discrete Semiconductor Products family, specifically the Transistors - FETs, MOSFETs - RF segment. This component excels in high-frequency applications with its low gate charge, high breakdown voltage, and excellent thermal management. Ideal for RF power amplification, the BLD6G21L-50,112 is frequently utilized in amateur radio equipment, cellular infrastructure, and aerospace communication systems. Its reliable performance under extreme conditions makes it a favorite among design engineers. Whether you're developing IoT devices or advanced military communication tools, NXP USA Inc.'s BLD6G21L-50,112 delivers unmatched efficiency and signal integrity for your RF designs.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.02GHz
- Gain: 14.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10.2A
- Noise Figure: -
- Current - Test: 170 mA
- Power - Output: 8W
- Voltage - Rated: 65 V
- Package / Case: SOT-1130A
- Supplier Device Package: CDFM4
Related Products
Ampleon USA Inc.
BLP9LA25SGZ
STMicroelectronics
PD55008-E
Nexperia USA Inc.
PH3830DL115
Ampleon USA Inc.
BLF13H9LS750PU
Ampleon USA Inc.
BLM8G0710S-15PBGY
Ampleon USA Inc.
BLF8G20LS-230VJ
Ampleon USA Inc.
BLC8G27LS-100AVY
Ampleon USA Inc.
CLF1G0035S-50,112
Ampleon USA Inc.
BLC10G22XS-301AVTZ
NXP USA Inc.