BLD6G22L-50,112
NXP USA Inc.
NXP USA Inc.
RF TRANSISTOR
$85.05
Available to order
Reference Price (USD)
1+
$85.05000
500+
$84.1995
1000+
$83.349
1500+
$82.4985
2000+
$81.648
2500+
$80.7975
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BLD6G22L-50,112 RF MOSFET transistor by NXP USA Inc. is a high-reliability component in the Discrete Semiconductor Products sector, specifically within Transistors - FETs, MOSFETs - RF. This transistor is optimized for high-frequency operation, offering low insertion loss, high efficiency, and excellent impedance matching. Its versatile design makes it suitable for a wide range of applications, including marine communication systems, avionics, and scientific instrumentation. The BLD6G22L-50,112 stands out for its ability to handle high power levels while maintaining signal integrity. When you choose NXP USA Inc.'s BLD6G22L-50,112, you're selecting a transistor that delivers consistent performance in the most challenging RF environments.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.14GHz
- Gain: 14dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10.2A
- Noise Figure: -
- Current - Test: 170 mA
- Power - Output: 8W
- Voltage - Rated: 65 V
- Package / Case: SOT-1130A
- Supplier Device Package: CDFM4
Related Products
Wolfspeed, Inc.
GTVA311801FA-V1
onsemi
MCH6408-TL-E
Ampleon USA Inc.
BLC10G18XS-360AVTZ
onsemi
MCH3319-TL-E
Ampleon USA Inc.
BLC8G27LS-160AVJ
NXP USA Inc.
MRF7S24250NR3
NXP USA Inc.
MRFX1K80NR5
NXP USA Inc.
MRF6V12500HSR5
Ampleon USA Inc.
BLP05H6110XRY
NXP USA Inc.