BLD6G22LS-50,112
NXP USA Inc.

NXP USA Inc.
RF TRANSISTOR
$90.08
Available to order
Reference Price (USD)
1+
$90.08000
500+
$89.1792
1000+
$88.2784
1500+
$87.3776
2000+
$86.4768
2500+
$85.576
Exquisite packaging
Discount
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The BLD6G22LS-50,112 is a high-efficiency RF MOSFET transistor by NXP USA Inc., part of the Discrete Semiconductor Products range and categorized under Transistors - FETs, MOSFETs - RF. Designed for optimal RF performance, this transistor features low intermodulation distortion, high power density, and excellent thermal conductivity. It's widely used in professional audio equipment, military jamming systems, and wireless networking devices. The BLD6G22LS-50,112's ability to maintain stable operation at high frequencies makes it indispensable for modern RF applications. With NXP USA Inc.'s reputation for quality, you can trust the BLD6G22LS-50,112 to deliver consistent, high-performance results in your most demanding RF circuits.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.14GHz
- Gain: 14dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10.2A
- Noise Figure: -
- Current - Test: 170 mA
- Power - Output: 8W
- Voltage - Rated: 65 V
- Package / Case: SOT-1130B
- Supplier Device Package: CDFM4