BLF10M6200112
NXP USA Inc.
NXP USA Inc.
POWER LDMOS TRANSISTOR
$81.05
Available to order
Reference Price (USD)
1+
$81.05000
500+
$80.2395
1000+
$79.429
1500+
$78.6185
2000+
$77.808
2500+
$76.9975
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BLF10M6200112 from NXP USA Inc. is a high-quality Bipolar Junction Transistor (BJT) designed for precision and durability. This single BJT transistor is perfect for applications requiring fast switching and low power consumption, such as portable electronics and IoT devices. With its compact size and robust construction, the BLF10M6200112 is a reliable choice for both commercial and industrial use. Trust NXP USA Inc. to provide top-tier discrete semiconductor products that enhance the performance and longevity of your electronic systems.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Diodes Incorporated
ZXTP08400BFFTA
Nexperia USA Inc.
BCX53TF
Diodes Incorporated
ZXTP19100CZTA
onsemi
BCP53-16T1G
Microchip Technology
JANSR2N3635
Microchip Technology
JAN2N3700UB/TR
NXP Semiconductors
BCV62C,215
onsemi
2SA1523-AC
onsemi
2SD1111
Nexperia USA Inc.