BLF6G20-110,112
NXP USA Inc.
NXP USA Inc.
RF TRANSISTOR
$77.55
Available to order
Reference Price (USD)
1+
$77.55000
500+
$76.7745
1000+
$75.999
1500+
$75.2235
2000+
$74.448
2500+
$73.6725
Exquisite packaging
Discount
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Engineered for excellence, the BLF6G20-110,112 RF MOSFET from NXP USA Inc. is a standout in the Discrete Semiconductor Products category, specifically within Transistors - FETs, MOSFETs - RF. This transistor offers unparalleled high-frequency performance, with features such as ultra-low RDS(on), high gain bandwidth, and superior noise immunity. It's the perfect solution for RF switching and amplification in applications like microwave ovens, RFID readers, and automotive radar systems. The BLF6G20-110,112's robust construction ensures long-term reliability even in harsh environments. Choose NXP USA Inc.'s BLF6G20-110,112 for your RF projects and benefit from industry-leading technology that enhances signal clarity and power efficiency.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.93GHz ~ 1.99GHz
- Gain: 19dB
- Voltage - Test: 28 V
- Current Rating (Amps): 29A
- Noise Figure: -
- Current - Test: 900 mA
- Power - Output: 25W
- Voltage - Rated: 65 V
- Package / Case: SOT-502A
- Supplier Device Package: SOT502A
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