BLF7G27LS-90P,112
NXP USA Inc.
NXP USA Inc.
RF PFET, 2-ELEMENT, S BAND, SILI
$64.88
Available to order
Reference Price (USD)
1+
$64.88000
500+
$64.2312
1000+
$63.5824
1500+
$62.9336
2000+
$62.2848
2500+
$61.636
Exquisite packaging
Discount
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As a leading solution in the Discrete Semiconductor Products market, the BLF7G27LS-90P,112 RF MOSFET from NXP USA Inc. (under Transistors - FETs, MOSFETs - RF) sets new standards for high-frequency performance. This transistor features ultra-fast switching, low thermal resistance, and outstanding ruggedness, making it ideal for RF power applications. It's commonly found in weather radar systems, mobile communication base stations, and electronic warfare equipment. The BLF7G27LS-90P,112's advanced design ensures maximum power transfer with minimal distortion. With NXP USA Inc.'s expertise in semiconductor innovation, the BLF7G27LS-90P,112 provides engineers with a reliable, high-performance component for their most critical RF designs.
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.5GHz ~ 2.7GHz
- Gain: 18.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): 18A
- Noise Figure: -
- Current - Test: 720 mA
- Power - Output: 16W
- Voltage - Rated: 65 V
- Package / Case: SOT-1121B
- Supplier Device Package: LDMOST
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