BLF888DS112
NXP USA Inc.
NXP USA Inc.
UHF POWER LDMOS TRANSISTOR, SOT5
$264.95
Available to order
Reference Price (USD)
1+
$264.95000
500+
$262.3005
1000+
$259.651
1500+
$257.0015
2000+
$254.352
2500+
$251.7025
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BLF888DS112 from NXP USA Inc. is a high-quality Bipolar Junction Transistor (BJT) designed for precision and durability. This single BJT transistor is perfect for applications requiring fast switching and low power consumption, such as portable electronics and IoT devices. With its compact size and robust construction, the BLF888DS112 is a reliable choice for both commercial and industrial use. Trust NXP USA Inc. to provide top-tier discrete semiconductor products that enhance the performance and longevity of your electronic systems.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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