BLF888ESU
Ampleon USA Inc.
Ampleon USA Inc.
RF FET LDMOS 104V 17DB SOT539B
$298.08
Available to order
Reference Price (USD)
1+
$274.34000
20+
$262.75200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BLF888ESU from Ampleon USA Inc. is a high-performance RF MOSFET transistor designed for demanding applications in the Discrete Semiconductor Products category. As part of the Transistors - FETs, MOSFETs - RF subcategory, this component offers exceptional gain, low noise, and high-frequency operation, making it ideal for RF amplification and switching circuits. Key features include low on-resistance, fast switching speeds, and excellent thermal stability. These transistors are widely used in wireless communication systems, radar equipment, and RF power amplifiers. For instance, the BLF888ESU is commonly employed in 5G base stations, military communication devices, and industrial RF heating systems where reliability and efficiency are paramount. Trust Ampleon USA Inc.'s expertise in semiconductor technology to deliver superior performance for your RF applications.
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 600MHz ~ 700MHz
- Gain: 17dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 600 mA
- Power - Output: 750W
- Voltage - Rated: 104 V
- Package / Case: SOT-539B
- Supplier Device Package: SOT539B
Related Products
Ampleon USA Inc.
BLF8G24LS-150GVQ
Ampleon USA Inc.
BLF183XRU
Ampleon USA Inc.
BLS6G3135-120,112
Wolfspeed, Inc.
GTVA263202FC-V1-R2
Ampleon USA Inc.
BLC10G19XS-551AVZ
Ampleon USA Inc.
BLP10H630PGY
NXP USA Inc.
MRF1513NT1
NXP USA Inc.
BF1206,115
NXP USA Inc.
MMRF1314HR5
Ampleon USA Inc.