BLM7G22S-60PBY
Ampleon USA Inc.
Ampleon USA Inc.
RF FET LDMOS 65V 31.5DB SOT12121
$50.25
Available to order
Reference Price (USD)
100+
$44.10000
Exquisite packaging
Discount
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The BLM7G22S-60PBY from Ampleon USA Inc. is a high-performance RF MOSFET transistor designed for demanding applications in the Discrete Semiconductor Products category. As part of the Transistors - FETs, MOSFETs - RF subcategory, this component offers exceptional gain, low noise, and high-frequency operation, making it ideal for RF amplification and switching circuits. Key features include low on-resistance, fast switching speeds, and excellent thermal stability. These transistors are widely used in wireless communication systems, radar equipment, and RF power amplifiers. For instance, the BLM7G22S-60PBY is commonly employed in 5G base stations, military communication devices, and industrial RF heating systems where reliability and efficiency are paramount. Trust Ampleon USA Inc.'s expertise in semiconductor technology to deliver superior performance for your RF applications.
Specifications
- Product Status: Last Time Buy
- Transistor Type: LDMOS (Dual)
- Frequency: 2.14GHz
- Gain: 31.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 75 mA
- Power - Output: 1.6W
- Voltage - Rated: 65 V
- Package / Case: SOT-1211-2
- Supplier Device Package: 16-HSOPF
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Ampleon USA Inc.