BLP8G05S-200Y
Ampleon USA Inc.
Ampleon USA Inc.
RF FET LDMOS 65V 21DB SOT11382
$49.86
Available to order
Reference Price (USD)
100+
$46.42670
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BLP8G05S-200Y from Ampleon USA Inc. is a high-performance RF MOSFET transistor designed for demanding applications in the Discrete Semiconductor Products category. As part of the Transistors - FETs, MOSFETs - RF subcategory, this component offers exceptional gain, low noise, and high-frequency operation, making it ideal for RF amplification and switching circuits. Key features include low on-resistance, fast switching speeds, and excellent thermal stability. These transistors are widely used in wireless communication systems, radar equipment, and RF power amplifiers. For instance, the BLP8G05S-200Y is commonly employed in 5G base stations, military communication devices, and industrial RF heating systems where reliability and efficiency are paramount. Trust Ampleon USA Inc.'s expertise in semiconductor technology to deliver superior performance for your RF applications.
Specifications
- Product Status: Last Time Buy
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 440MHz
- Gain: 21dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 2 mA
- Power - Output: 210W
- Voltage - Rated: 65 V
- Package / Case: SOT-1138-2
- Supplier Device Package: 4-HSOPF
Related Products
Wolfspeed, Inc.
CGHV1J070D-GP4
Ampleon USA Inc.
BLC9G20LS-160PVZ
NXP USA Inc.
MRF8P8300HSR6
NXP USA Inc.
A2I08H040GNR1
Ampleon USA Inc.
BLF184XRU
Wolfspeed, Inc.
CG2H40035F
NXP USA Inc.
MRFE6VP100HSR5
Ampleon USA Inc.
BLF7G24LS-100,112
Ampleon USA Inc.
BLC9G15XS-400AVTZ
STMicroelectronics