BLT80,115
NXP USA Inc.
NXP USA Inc.
RF TRANS NPN 10V 900MHZ SOT223
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Discover the BLT80,115, a cutting-edge RF Bipolar Junction Transistor (BJT) from NXP USA Inc., part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The BLT80,115 features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose NXP USA Inc. for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 900MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 2W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 150mA, 5V
- Current - Collector (Ic) (Max): 250mA
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SC-73
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