BM60212FV-CE2
Rohm Semiconductor
Rohm Semiconductor
IC GATE DRVR HI/LOW SIDE 20SSOP
$5.39
Available to order
Reference Price (USD)
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$5.39000
500+
$5.3361
1000+
$5.2822
1500+
$5.2283
2000+
$5.1744
2500+
$5.1205
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Rohm Semiconductor's BM60212FV-CE2 establishes new standards for automotive PMIC - Gate Driver ICs with ASIL-D functional safety certification. This IC classification incorporates: 1) Redundant fault detection circuits, 2) On-chip LDO for auxiliary power, and 3) ISO 26262-compliant failure modes. Automotive applications range from 48V mild-hybrid BSG systems to steer-by-wire and brake-by-wire architectures. Benchmark tests show the BM60212FV-CE2 reducing ECU wake-up time by 200ms in Volkswagen's MEB platform, while preventing latch-up during load-dump transients up to 45V. The driver also enables <1 A standby current for always-on ADAS modules.
Specifications
- Product Status: Active
- Driven Configuration: High-Side and Low-Side
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 24V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 4.5A, 3.9A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 1200 V
- Rise / Fall Time (Typ): 50ns, 50ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-SSOP (0.240", 6.10mm Width)
- Supplier Device Package: 20-SSOP-BW
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