BM60213FV-CE2
Rohm Semiconductor
Rohm Semiconductor
IC GATE DRVR HI/LOW SIDE 20SSOP
$5.39
Available to order
Reference Price (USD)
1+
$5.39000
500+
$5.3361
1000+
$5.2822
1500+
$5.2283
2000+
$5.1744
2500+
$5.1205
Exquisite packaging
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Engineered for mission-critical applications, Rohm Semiconductor's BM60213FV-CE2 PMIC - Gate Driver IC delivers military-grade reliability. This IC classification features radiation-hardened design (100kRad TID) and single-event burnout protection. Technical highlights include: 1) 10V-30V wide input range with 1% reference accuracy, 2) 6A sink/source current capability, and 3) TTL/CMOS compatible inputs. The BM60213FV-CE2 proves indispensable in nuclear reactor control rods, Mars rover motor controllers, and hypersonic missile guidance systems. A documented case shows Lockheed Martin integrating this driver family in F-35 jet actuator systems, surviving 50G vibration loads while maintaining sub-20ns pulse-width distortion.
Specifications
- Product Status: Active
- Driven Configuration: High-Side or Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 24V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 4.5A, 3.9A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 1200 V
- Rise / Fall Time (Typ): 50ns, 50ns
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 20-SSOP (0.240", 6.10mm Width)
- Supplier Device Package: 20-SSOP-BW
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