BS107PSTZ
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 200V 120MA E-LINE
$1.00
Available to order
Reference Price (USD)
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$1.00000
500+
$0.99
1000+
$0.98
1500+
$0.97
2000+
$0.96
2500+
$0.95
Exquisite packaging
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The BS107PSTZ by Diodes Incorporated is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the BS107PSTZ is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.6V, 5V
- Rds On (Max) @ Id, Vgs: 30Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: E-Line (TO-92 compatible)
- Package / Case: E-Line-3
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