BS2101F-E2
Rohm Semiconductor
Rohm Semiconductor
IC GATE DRV HI-SIDE/LO-SIDE 8SOP
$1.60
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Reference Price (USD)
2,500+
$0.33060
5,000+
$0.31920
Exquisite packaging
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Rohm Semiconductor's BS2101F-E2 establishes new standards for automotive PMIC - Gate Driver ICs with ASIL-D functional safety certification. This IC classification incorporates: 1) Redundant fault detection circuits, 2) On-chip LDO for auxiliary power, and 3) ISO 26262-compliant failure modes. Automotive applications range from 48V mild-hybrid BSG systems to steer-by-wire and brake-by-wire architectures. Benchmark tests show the BS2101F-E2 reducing ECU wake-up time by 200ms in Volkswagen's MEB platform, while preventing latch-up during load-dump transients up to 45V. The driver also enables <1 A standby current for always-on ADAS modules.
Specifications
- Product Status: Not For New Designs
- Driven Configuration: High-Side or Low-Side
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 18V
- Logic Voltage - VIL, VIH: 1V, 2.6V
- Current - Peak Output (Source, Sink): 60mA, 130mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600 V
- Rise / Fall Time (Typ): 60ns, 20ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
- Supplier Device Package: 8-SOP
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