BS2103F-E2
Rohm Semiconductor
Rohm Semiconductor
IC GATE DRVR HALF-BRIDGE 8SOP
$0.00
Available to order
Reference Price (USD)
2,500+
$0.42000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BS2103F-E2 from Rohm Semiconductor is a high-performance PMIC - Gate Driver IC designed for precision control in power management applications. This integrated circuit excels in driving MOSFETs and IGBTs with exceptional speed and reliability, making it ideal for high-frequency switching systems. Key features include robust noise immunity, low propagation delay, and adaptive dead-time control to optimize efficiency. These gate drivers are widely used in industrial motor controls, solar inverters, and electric vehicle powertrains. For instance, the BS2103F-E2 ensures seamless operation in servo drives requiring nanosecond-level response times. Its compact design and thermal protection mechanisms further enhance system longevity in demanding environments like factory automation and renewable energy systems.
Specifications
- Product Status: Obsolete
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 18V
- Logic Voltage - VIL, VIH: 1V, 2.6V
- Current - Peak Output (Source, Sink): 60mA, 130mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600 V
- Rise / Fall Time (Typ): 200ns, 100ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
- Supplier Device Package: 8-SOP
Related Products
NXP USA Inc.
PHD45NQ15T,118
Infineon Technologies
IR2125STR
Infineon Technologies
IRS2336JPBF
Renesas Electronics America Inc
ISL6605IB-T
Monolithic Power Systems Inc.
MP1921HR-A-LF-P
IXYS
IXC611S1T/R
Infineon Technologies
IR2130
IXYS
IXDD404SIA
Texas Instruments
LM5110-2MX
Elantec