BSB008NE2LXXUMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 25V 46A/180A 2WDSON
$2.51
Available to order
Reference Price (USD)
5,000+
$1.10825
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSB008NE2LXXUMA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the BSB008NE2LXXUMA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.8mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 343 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MG-WDSON-2, CanPAK M™
- Package / Case: 3-WDSON
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