BSC025N08LS5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 80V 100A TDSON-8-7
$4.14
Available to order
Reference Price (USD)
1+
$4.14000
500+
$4.0986
1000+
$4.0572
1500+
$4.0158
2000+
$3.9744
2500+
$3.933
Exquisite packaging
Discount
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The BSC025N08LS5ATMA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the BSC025N08LS5ATMA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 115µA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-7
- Package / Case: 8-PowerTDFN
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