BSC029N025SG
Infineon Technologies
Infineon Technologies
N-CHANNEL POWER MOSFET
$0.75
Available to order
Reference Price (USD)
1+
$0.75000
500+
$0.7425
1000+
$0.735
1500+
$0.7275
2000+
$0.72
2500+
$0.7125
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSC029N025SG from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the BSC029N025SG offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-1
- Package / Case: 8-PowerTDFN
Related Products
onsemi
FDD9411-F085
EPC
EPC2071
Rohm Semiconductor
SCT3120AW7TL
Rohm Semiconductor
R8007AND3FRATL
Rohm Semiconductor
R6004ENDTL
Infineon Technologies
IRF7451TRPBF
Diodes Incorporated
ZXMN7A11KTC
Alpha & Omega Semiconductor Inc.
AO3160E
Vishay Siliconix
SI4848ADY-T1-GE3
Diodes Incorporated