BSC052N08NS5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 80V 95A TDSON
$2.67
Available to order
Reference Price (USD)
5,000+
$0.88774
10,000+
$0.86912
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the BSC052N08NS5ATMA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the BSC052N08NS5ATMA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 47.5A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 49µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-7
- Package / Case: 8-PowerTDFN
Related Products
STMicroelectronics
STB7NK80ZT4
Microchip Technology
APTM10UM01FAG
Harris Corporation
RFL4N15
onsemi
NVHL040N120SC1
Nexperia USA Inc.
PHB47NQ10T,118
onsemi
FDS5690
IXYS
IXTT220N20X4HV
Infineon Technologies
AUIRFS4115TRL
Nexperia USA Inc.
PSMN6R0-25YLB,115
PN Junction Semiconductor