BSC0702LSATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 100A SUPERSO8
$1.88
Available to order
Reference Price (USD)
5,000+
$0.65952
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the BSC0702LSATMA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the BSC0702LSATMA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 49µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V
- FET Feature: Standard
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
Related Products
onsemi
FCP360N65S3R0
Diodes Incorporated
DMPH6050SK3-13
onsemi
NVHL082N65S3F
Infineon Technologies
IPS135N03LG
Toshiba Semiconductor and Storage
SSM6J401TU,LF
Microchip Technology
APT8014L2FLLG
Fairchild Semiconductor
FDD6688
Alpha & Omega Semiconductor Inc.
AON7422G
onsemi
NTD4806NT4G
onsemi