BSC0802LSATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 20A/100A TDSON
$3.76
Available to order
Reference Price (USD)
1+
$3.76000
500+
$3.7224
1000+
$3.6848
1500+
$3.6472
2000+
$3.6096
2500+
$3.572
Exquisite packaging
Discount
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Upgrade your designs with the BSC0802LSATMA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the BSC0802LSATMA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 115µA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-7
- Package / Case: 8-PowerTDFN
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