BSC097N06NSTATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 13A/48A TDSON
$0.68
Available to order
Reference Price (USD)
5,000+
$0.39165
10,000+
$0.37692
25,000+
$0.37478
Exquisite packaging
Discount
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Meet the BSC097N06NSTATMA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The BSC097N06NSTATMA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 9.7mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 14µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 43W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-1
- Package / Case: 8-PowerTDFN
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