BSC150N03LDGATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 30V 8A 8TDSON
$1.20
Available to order
Reference Price (USD)
5,000+
$0.41447
10,000+
$0.39889
25,000+
$0.39662
Exquisite packaging
Discount
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The BSC150N03LDGATMA1 by Infineon Technologies is a top-tier selection in the Discrete Semiconductor Products range. This Transistors - FETs, MOSFETs - Arrays unit boasts high current capacity and excellent thermal performance, making it a go-to solution for power electronics. Whether you're working on electric vehicles, solar inverters, or industrial machinery, the BSC150N03LDGATMA1 offers superior functionality and longevity. Trust Infineon Technologies to provide semiconductor components that push the boundaries of innovation.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
- Power - Max: 26W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-4
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