BSC252N10NSFGATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 7.2A/40A TDSON
$1.58
Available to order
Reference Price (USD)
5,000+
$0.54433
10,000+
$0.52622
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSC252N10NSFGATMA1 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the BSC252N10NSFGATMA1 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 25.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 43µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 78W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-1
- Package / Case: 8-PowerTDFN
Related Products
EPC
EPC2021
Diodes Incorporated
DMN53D0L-7
IXYS
IXFX140N25T
Diodes Incorporated
DMT69M8LFV-13
Infineon Technologies
IPP60R600CP
onsemi
FDMS8333L
Fairchild Semiconductor
FDZ204P
Infineon Technologies
IRLZ44NSTRLPBF
Texas Instruments
CSD17577Q3A
STMicroelectronics