BSM120D12P2C005
Rohm Semiconductor
Rohm Semiconductor
MOSFET 2N-CH 1200V 120A MODULE
$441.32
Available to order
Reference Price (USD)
1+
$348.16000
10+
$343.25200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSM120D12P2C005 by Rohm Semiconductor is a superior addition to the Discrete Semiconductor Products inventory. As a Transistors - FETs, MOSFETs - Arrays device, it features low threshold voltage and high switching speed, ideal for energy-efficient designs. Suitable for applications like smart home devices, power tools, and HVAC systems, the BSM120D12P2C005 ensures consistent and dependable performance. Rohm Semiconductor's commitment to quality ensures this MOSFET array exceeds expectations.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 2.7V @ 22mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 10V
- Power - Max: 780W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: -
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Diodes Incorporated
DMP31D7LDW-7
Wolfspeed, Inc.
CAB450M12XM3
Fairchild Semiconductor
FDS6986S
onsemi
EFC4621R-TR
Diodes Incorporated
DMG1016V-7
Diodes Incorporated
ZXMP6A18DN8TA
Diodes Incorporated
DMN2710UDWQ-7
Infineon Technologies
AUIRFN8459TR
Renesas Electronics America Inc
UPA610TA-T1-A
Diodes Incorporated