BSM150GB170DLCHOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1700V 300A 1250W
$175.27
Available to order
Reference Price (USD)
10+
$194.15900
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-generation power control with Infineon Technologies's BSM150GB170DLCHOSA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The BSM150GB170DLCHOSA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the BSM150GB170DLCHOSA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the BSM150GB170DLCHOSA1 IGBT module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 300 A
- Power - Max: 1250 W
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 150A
- Current - Collector Cutoff (Max): 300 µA
- Input Capacitance (Cies) @ Vce: 10 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
FP35R12KT4B11BPSA1
Microchip Technology
APTGT30H60T1G
Infineon Technologies
FF300R17KE3S4HOSA1
Microchip Technology
APTGLQ300H65G
Infineon Technologies
FP35R12KT4B16BOSA1
Infineon Technologies
FF450R17ME4B11BPSA1
Microchip Technology
APTGLQ40HR120CT3G
Infineon Technologies
FS20R06XE3BOMA1
IXYS
IXGN400N60A3
Microchip Technology